[PDF.53pa] Near-thermal-equilibrium Growth of 4H-, 6H- and 15R-silicon Carbide Single Crystals: Sublimation Growth of Bulk SiC by the Modified Lely Method and the ... (Berichte Aus Der Halbleitertechnik)

Near-thermal-equilibrium Growth of 4H-, 6H- and 15R-silicon Carbide Single Crystals: Sublimation Growth of Bulk SiC by the Modified Lely Method and the ... (Berichte Aus Der Halbleitertechnik)

[PDF.is36] Near-thermal-equilibrium Growth of 4H-, 6H- and 15R-silicon Carbide Single Crystals: Sublimation Growth of Bulk SiC by the Modified Lely Method and the ... (Berichte Aus Der Halbleitertechnik)

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Near-thermal-equilibrium Growth of 4H-,  Norbert Schulze book review
Near-thermal-equilibrium Growth of 4H-,  Norbert Schulze summary

 | #15556902 in Books |  2001-08-21 | Format: Import | Original language:English | File type: PDF | 149 pages

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